Analysis of 2-D quantum effects in the poly-gate and their impact on the short-channel effects in double-gate MOSFETs via the density-gradient method

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1163-1168

  Park, Ji Sun ^a   Shin, Hyungsoon ^a   Connelly, Daniel ^b   Yergeau, Dan ^c   Yu, Zhiping ^c   Dutton, Robert W ^c  

^a Ewha Womans University   (South Korea)

^b Acorn Technologies   (United States)

^c Stanford University   (United States)

Author keywords

MOSFETs; Quantum effect; Semiconductor device modeling; Short channel effect; Simulation

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MATHEMATICAL OPERATORS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SILICON; THIN FILMS;

QUANTUM EFFECTS; SEMICONDUCTOR DEVICE MODELING; SHORT-CHANNEL EFFECT;

MOSFET DEVICES;

EID: 1842843095     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.001     Document Type: Article

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