Macroscopic simulation of quantum mechanical effects in 2-D MOS devices via the density gradient method

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 619-626

  Connelly, Daniel ^a,b   Yu, Zhiping ^a,c   Yergeau, Dan ^c  

^a IEEE   (United States)

^b Acorn Technologies   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

Capacitance; Metal oxide semiconductor (MOS) devices; Quantum theory; Semiconductor device modeling; Silicon; Silicon on insulator (SOI) technology; Simulation

Indexed keywords

DENSITY GRADIENT METHOD;

CAPACITANCE; COMPUTER SIMULATION; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

MOS DEVICES;

EID: 0036538950     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992871     Document Type: Article

References (22)

1. Well-tempered MOSFETs: 1-D versus 2-D quantum analysis
2. Polysilicon quantization effects on the electrical properties of MOS transistors
3. An improved formula for the determination of the polysilicon doping
4. A simple model for quantization effects in heavily-doped silicon MOSFETs at inversion conditions
5. Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region
6. Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques
7. Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides
8. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density gradient study
9. Macroscopic quantum career transport modeling
10. Equations of state for silicon inversion layers
11. Density-gradient analysis of MOS tunneling
12. On ohmic boundary conditions for density-gradient theory
13. Efficient multidimensional simulation of quantum confinement effects in advanced MOS devices
14. Simulation of quantum confinement effects in ultra-thin-oxide MOS structures
15. Accurate characterization of electron and hole inversion layer capacitances and its impact on low voltage operation of scaled MOSFETs
16. Quantum device-simulation with the density-gradient model on unstructured grids
17. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics
18. An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si
19. Scaled silicon MOSFETs: Degradation of the total gate capacitance
20. Decananometer FDSOI device optimization including random variation