Two-dimensional polysilicon quantum-mechanical effects in double-gate SOI

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 723-726

  Choi, Chang Hoon ^a   Yu, Zhiping ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; GATES (TRANSISTOR); INTERFACES (MATERIALS); POLYSILICON; QUANTUM THEORY;

QUANTIZATION EFFECTS;

MOS DEVICES;

EID: 0036923642     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. S. Spinelli, et al., "Polysilicon Quantization Effects on the Electrical Properties of MOS Transistors," IEEE Trans. Electron Devices, p. 2366, Dec. 2000.
2. D. Connelly, et al., "Macroscopic Simulation of Quantum Mechanical Effects in 2-D MOS Devices via the Density Gradient Method," IEEE Trans. Electron Devices, p. 619, Apr. 2002.
3. Z. Yu, et al., "Macroscopic Quantum Carrier Transport Modeling," in Proc. SISPAD, p. 1, 2001.
4. R. Zhang, et al., "Low-Power High-Performance Double-Gate Fully Depleted SOI Circuit Design," IEEE Trans. Electron Devices, p. 852, May 2002.
5. C.-H. Choi, et al., "Gate Length Dependent Polysilicon Depletion Effects," IEEE Electron Device Lett., p. 224, Apr. 2002.