A new quantum effect model for practical device simulation

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1010-1012

  Shigyo, Naoyuki ^a   Tanimoto, Hiroyoshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Device modeling; Device simulation; MOSFET's; Quantum mechanical effect; Semiconductor device modeling; Technology CAD

Indexed keywords

EID: 0000934786     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841234     Document Type: Article

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