Defect characterization for epitaxial HgCdTe alloys by electron microscopy

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 224-234

  Aoki, T ^a   Chang, Y ^b   Badano, G ^b   Zhao, J ^b   Grein, C ^b   Sivananthan, S ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting mercury compounds; B3. Infrared devices

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; RADIATION DETECTORS; STACKING FAULTS; THERMAL CYCLING; TWINNING;

FOCAL PLANE ARRAYS (FPA); SEMICONDUCTING MERCURY COMPOUNDS;

MERCURY COMPOUNDS;

EID: 1842475278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.063     Document Type: Article

References (54)

1. Kinch M.A. J. Electron. Mater. 29:2000;809.
2. Rogalski A. Infrared Phys. Technol. 38:1997;295.
3. Rogalski A. Infrared Detectors. 2000;Gordon and Breach, London.
4. Bajaj J., Arias J.M., Zandian M., Pasko J.G., Kozlowski L.J., Dewames R.E., Tennant W.E. J. Electron. Mater. 24:1995;1067.
5. Scribner D.E., Kruer M.R., Killiany J.M. Proc. IEEE. 79:1991;66.
6. Zanatta J.P., Ferret P., Duvaut P., Isselin S., Theret G., Rolland G., Million A. J. Crystal Growth. 184-185:1998;1297.
7. de Lyon T.J., Jensen J.E., Kasai I., Venzor G.M., Kosai K., de Bruin J.B., Ahlgren W.L. J. Electron. Mater. 31:2002;220.
8. Zhang X.F., Becker C.R., Zhang H., He L., Landwehr G. Semicond. Sci. Technol. 9:1994;2217.
9. van Schilfgaarde M., Sher A., Chen A.-B. Appl. Phys. Lett. 62:1993;1857.
10. Smith D.J., Tsen S.-C.Y., Chandrasekhar D., Crozier P.A., Rujirawat S., Brill G., Chen Y.P., Sporken R., Sivananthan S. Mater. Sci. Eng. B. 77:2000;93.
11. Pennycook S.J., Jesson D.E. Ultramicroscopy. 37:1991;14.
12. Arias J.M., Pasko J.G., Zandian M., Bajaj J., Kozlowski L.J., Dewames R.E., Tennant W.E. Proc. SPIE. 2021:1993;114.
13. Farrow R.F.C., Jones G.R., Williams G.M., Young I.M. Appl. Phys. Lett. 39:1981;954.
14. Myers T.H., Lo Y., Bicknell R.N., Schetzina J.F. Appl. Phys. Lett. 42:1983;247.
15. Arias J.M., Dewames R.E., Shin S.H., Pasko J.G., Shen J.S., Gertner E.R. Appl. Phys. Lett. 54:1989;1025.
16. Sporken R., Sivananthan S., Mahavadi K.K., Monfroy G., Boukerche M., Faurie J.P. Appl. Phys. Lett. 55:1989;1879.
17. Rujirawat S., Almeida L.A., Chen Y.P., Sivananthan S., Smith D.J. Appl. Phys. Lett. 71:1997;1810.
18. de Lyon T.J., Jensen J.E., Gorwitz M.D., Cockrum C.A., Johnson S.M., Venzor G.M. J. Electron. Mater. 28:1999;705.
19. Castro C.A., Tregilgas J.H. J. Crystal Growth. 86:1988;138.
20. Pelliciari B. J. Crystal Growth. 86:1988;146.
21. Irvine S.J.C., Mullin J.B. J. Crystal Growth. 55:1981;107.
22. Kuech T.F., McCaldin J.O. J. Electrochem. Soc. 128:1981;1142.
23. Rogalski A. Infrared Phys. Technol. 41:2000;213.
24. Sidorov Y.G., Dvoretskii S.A., Varavin V.S., Mikhailov N.N., Yakushev M.V., Sabinina I.V. Semiconductors. 35:2001;1045.
25. Szilagyi A., Grimbergen M.N. J. Vac. Sci. Technol. A. 4:1986;2201.
26. Zhao L.J., Speck J.S., Rajavel R., Jensen J., Leonard D., Strand T., Hamilton W. J. Electron. Mater. 29:2000;732.
27. Yang B., Xin Y., Rujirawat S., Browning N.D., Sivananthan S. J. Appl. Phys. 88:2000;115.
28. Sabinina I.V., Gutakousky A.K., Sidorov Yu.G., Droretsky S.A., Kuzmin V.D. J. Crystal Growth. 117:1992;238.
29. Koestner R.J., Schaake H.F. J. Vac. Sci. Technol. A. 6:1988;2834.
30. Kawano M., Oda N., Sasaki T., Ichihashi T., Iijima S., Kanno T., Saga M. J. Crystal Growth. 117:1992;171.
31. Martinka M., Almeida L.A., Benson J.D., Dinan J.H. J. Electron. Mater. 30:2001;632 Martinka M., Almeida L.A., Benson J.D., Dinan J.H. J. Electron. Mater. 31:2002;732.
32. Martinka M., Almeida L.A., Benson J.D., Dinan J.H. J. Electron. Mater. 30:2001;632 Martinka M., Almeida L.A., Benson J.D., Dinan J.H. J. Electron. Mater. 31:2002;732.
33. Rhiger D.R., Peterson J.M., Emerson R.M., Gordon E.E., Sen S., Chen Y., Dudley M. J. Electron. Mater. 27:1998;615.
34. Arias J.M., Zandian M., Bajaj J., Pasko J.G., Bululac L.O., Shin S.H., Dewames R.E. J. Electron. Mater. 24:1995;521.
35. Zandian M., Arias J.M., Bajaj J., Pasko J.G., Bubulac L.O., Dewames R.E. J. Electron. Mater. 24:1995;1207.
36. Varavin V.S., Dronetsky S.A., Liberman V.I., Mikhailov N.N., Sidorov Yu.G. J. Crystal Growth. 159:1996;1161.
37. Zhang L.H., Summers C.J. J. Electron. Mater. 27:1998;634.
38. Chandra D., Shih H.D., Aqariden F., Dat R., Gutzler S., Bevan M.J., Orent T. J. Electron. Mater. 27:1998;640.
39. Chandra D., Aqariden F., Frazier J., Gutzler S., Orent T., Shih H.D. J. Electron. Mater. 29:2000;887.
40. Piquette E.C., Zandian M., Edwall D.D., Arias J.M. J. Electron. Mater. 30:2001;627.
41. Aqariden F., Shih H.D., Turner A.M., Liao P.K. J. Electron. Mater. 30:2001;794.
42. He L., Wu Y., Chen L., Wang S.L., Yu M.F., Qiao Y.M., Yang J.R., Li Y.J., Ding R.J., Zhang Q.Y. J. Crystal Growth. 227-228:2001;677.
43. Aoki T., Smith D.J., Chang Y., Zhao J., Badano G., Grein C., Sivananthan S. Appl. Phy. Lett. 82:2003;2275.
44. Schaake H.F., Tregilgas J.H., Lewis A.J., Everett P.M. J. Vac. Sci. Technol. A. 1:1983;1625.
45. Shin S.H., Arias J.M., Edwall D.D., Zandian M., Pasko J.G., Bubulac L.O., DeWames R.E. J. Vac. Sci. Technol. B. 10:1992;1492.
46. Xin Y., Browning N.D., Rujirawat S., Sivananthan S., Chen Y.P., Nellist P.D., Pennycook S.J. J. Appl. Phys. 84:1998;4292.
47. Harris K.A., Myers T.H., Yanka R.W., Mohnkern L.M., Green R.W., Otsuka N. J. Vac. Sci. Technol. A. 8:1990;1013.
48. Million A., Di Cioccio L., Gailliard J.P., Piaguet J. J. Vac. Sci. Technol. A. 6:1988;2813.
49. Yong Chang, Private communication.
50. Aoki T., Chang Y., Zhao J., Badano G., Grein C., Sivananthan S., Smith D.J. J. Electron. Mater. 32:2003;703.
51. Shin S.H., Bajaj J., Moudy L.A., Cheung D.T. Appl. Phys. Lett. 43:1983;68.
52. Vydyanath H.R., Ellsworth J., Kennedy J.J., Dean B., Johnson C.J., Neugebauer G.T., Sepich J., Liao P.-K. J. Vac. Sci. Technol. B. 10:1992;1476.
53. Chew N.G., Cullis A.G., Williams G.M. Appl. Phys. Lett. 45:1984;1090.
54. Cullis A.G., Chew N.G. Ultramicroscopy. 17:1985;203.