Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 732-735

  Zhao, Lijie ^a   Speck, J S ^a   Rajavel, R ^b   Jensen, J ^b   Leonard, D ^c   Strand, T ^c   Hamilton, W ^c  

^a University of California   (United States)

^b Hughes Aircraft Co   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0033703237     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0216-z     Document Type: Article

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