Formation and control of defects during molecular beam epitaxial growth of HgCdTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 640-647

  Chandra, D ^a   Shih, H D ^a   Aqariden, F ^b   Dat, R ^a   Gutzler, S ^a   Bevan, M J ^c   Orent, T ^a  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Defects; Dislocations; HgCdTe; Infrared dectors; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0006108760     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0028-0     Document Type: Article

References (13)

1. D. Chandra, J.H. Tregilgas and M.W. Goodwin, J. Vac. Sci. Technol. B 9, 1852 (1991).
2. S. Matteson and H.D. Shih, Appl. Phys. Lett. 48, 47 (1986).
3. C. Amano, H. Sugiura, A. Yamamoto and M. Yamaguchi, Appl. Phys. Lett. 51, 1998 (1987).
4. Y. Horikoshi and K. Ploog, Appl. Phys. Lett. 37, 47 (1985).
5. F. Capasso, Surf. Sci. 142, 513 (1984).
6. E.R. Blazejewski, J.M. Arias, G.M. Williams, W. McLevige, M. Zandian and J. Pasko, J. Voc. Sci. Technol. B 10, 1626 (1992).
7. J.P. Faurie, S. Sivananthan and P.S. Wijewarnasuriya, SPIE Conf. Proc. 1735, 141 (1992).
8. M. Zandian, J.M. Arias, J. Bajaj, J.G. Pasko, L.O. Bubulac and R.E. DeWames, J. Electron. Mater. 24, 1207 (1995).
9. J.M. Arias, J.G. Pasko, M. Zandian, S.H. Shin, L.O. Bubulac, R.E. DeWames and W.E. Tennant, J. Electron. Mater. 22, 1049 (1993).
10. M.J. Bevan, W.M. Duncan, G.H. Westphal and H.D. Shih, J. Electron. Mater. 25, 1371 (1996).
11. M.J. Bevan, L.A. Almeida, W.M. Duncan and H.D. Shih, J. Electron. Mater. 26, 502 (1997).
12. J.M. Arias, M. Zandian, J. Bajaj, L.O. Bubulac, S.H. Shin and R.E. DeWames, J. Electron. Mater. 24, 521 (1995).
13. J.P. Faurie, R. Sporken, S. Sivananthan and M.D. Lange, J. Cryst. Growth. 111, 698 (1991).