Growth and characterization of CdTe/Si heterostructures - effect of substrate orientation

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 77, Issue 1, 2000, Pages 93-100

  Smith, David J ^a   Tsen, S C Y ^a   Chandrasekhar, D ^a   Crozier, P A ^a   Rujirawat, S ^b   Brill, G ^b   Chen, Y P ^c   Sporken, R ^b,d   Sivananthan, S ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^c EPIR TECHNOLOGIES INC   (United States)

^d UNIVERSITY OF NAMUR   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; GRAIN BOUNDARIES; HETEROJUNCTIONS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

PHASE NUCLEATION; SUBSTRATE ORIENTATION;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0034249077     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00480-3     Document Type: Article

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