Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 703-709

  Aoki, T ^a   Chang, Y ^b   Badano, G ^b   Zhao, J ^b   Grein, C ^b   Sivananthan, S ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

HgCdTe; High resolution electron microscopy; Molecular beam epitaxy (MBE); Surface crater defects

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS;

MERCURY COMPOUNDS;

EID: 0043269229     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0056-8     Document Type: Conference Paper

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