A study of void defects in metalorganic molecular-beam epitaxy grown HgCdTe

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 634-639

  Zhang, L H ^a   Summers, C J ^a  

^a GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

Defect; HgCdTe; Metalorganic molecular beam epitaxy (MOMBE); Void

Indexed keywords

EID: 0001499099     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0027-1     Document Type: Article

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