MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 627-631

  Piquette, E C ^a   Zandian, M ^a   Edwall, D D ^a   Arias, J M ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

Defects; HgCdTe; Kinetic effects; MBE; Substrates

Indexed keywords

CRYSTAL DEFECTS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

KINETIC EFFECTS; MERCURY CADMIUM TELLURIDE; THERMODYNAMICAL MODEL;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035360041     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665846     Document Type: Article

References (14)