SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 1297-1301

Heteroepitaxy of CdTe on Ge(2 1 1) substrates by molecular beam epitaxy

(7) Zanatta, J P a Ferret, P a Duvaut, P a Isselin, S a Theret, G a Rolland, G a Million, A a

a CEA LETI (France)

Author keywords

CdTe; Ge; Heteroepitaxy; MBE

Indexed keywords

EID: 0002578666 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80269-8 Document Type: Article

Times cited : (33)

References (23)

1
- 0029379389
- J. Bajaj, J.M. Arias, M. Zandian, J.G. Pasko, L.J. Kolosky, R.E. DeWames, W.E. Tennant, J. Electron. Mater. 24 (1995) 1067.
- (1995) J. Electron. Mater. , vol.24 , pp. 1067
- Bajaj, J.¹ Arias, J.M.² Zandian, M.³ Pasko, J.G.⁴ Kolosky, L.J.⁵ DeWames, R.E.⁶ Tennant, W.E.⁷

2
- 0029714558
- O.K. Wu, D. Rajavel, T.J. De Lyon, J.E. Jensen, S.M. Johnson, C.A. Cockrum, G.M. Vensor, SPIE 2685 (1996) 16.
- (1996) SPIE , vol.2685 , pp. 16
- Wu, O.K.¹ Rajavel, D.² De Lyon, T.J.³ Jensen, J.E.⁴ Johnson, S.M.⁵ Cockrum, C.A.⁶ Vensor, G.M.⁷

3
- 0344592148
- G. Destefanis, J.P. Chamonal, J. Electron. Mater. 22 (1993) 1017.
- (1993) J. Electron. Mater. , vol.22 , pp. 1017
- Destefanis, G.¹ Chamonal, J.P.²

4
- 0031099210
- N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, J.H. Dinan, Appl. Phys. Lett. 70 (1997) 1730.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1730
- Dhar, N.K.¹ Zandian, M.² Pasko, J.G.³ Arias, J.M.⁴ Dinan, J.H.⁵

5
- 0028753982
- S. Sen, J.E. Stannard, Prog. Crystal Growth Charact. 29 (1994) 253.
- (1994) Prog. Crystal Growth Charact. , vol.29 , pp. 253
- Sen, S.¹ Stannard, J.E.²

6
- 0028698385
- G.T. Neugebauer, R. Shetty, C.K. Ard, R.A. Lancaster, P. Norton, SPIE 2228 (1994) 2.
- (1994) SPIE , vol.2228 , pp. 2
- Neugebauer, G.T.¹ Shetty, R.² Ard, C.K.³ Lancaster, R.A.⁴ Norton, P.⁵

7
- 36749119405
- R.F.C. Farrow, G.R. Jones, G.M. Willimas, I.M. Young, Appl. Phys. Lett. 39 (1981) 954.
- (1981) Appl. Phys. Lett. , vol.39 , pp. 954
- Farrow, R.F.C.¹ Jones, G.R.² Willimas, G.M.³ Young, I.M.⁴

8
- 0042876306
- T.H. Myers, Y. Lo, R.N. Bicknell, J.F. Schetzina, Appl. Phys. Lett. 42 (1983) 247.
- (1983) Appl. Phys. Lett. , vol.42 , pp. 247
- Myers, T.H.¹ Lo, Y.² Bicknell, R.N.³ Schetzina, J.F.⁴

9
- 0029699844
- J.P. Faurie, L.A. Almmeida, Y.P. Chen, R. Sporken. S. Sivanathan, SPIE 2685 (1996) 28.
- (1996) SPIE , vol.2685 , pp. 28
- Faurie, J.P.¹ Almmeida, L.A.² Chen, Y.P.³ Sporken, R.⁴ Sivanathan, S.⁵

10
- 0041186835
- J.M. Arias, R.E. Dewames, S.H. Shin, J.G. Pasko, J.S. Shen, E.R. Gertner, Appl. Phys. Lett. 54 (1989) 1025.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 1025
- Arias, J.M.¹ Dewames, R.E.² Shin, S.H.³ Pasko, J.G.⁴ Shen, J.S.⁵ Gertner, E.R.⁶

11
- 0000696384
- T.J. De Lyon, R.D. Rajavel, J.E. Jensen, O.K. Wu, S.M. Johnson, C.A. Cockrum, G.M. Venzor, J. Electron. Mater. 25 (1996) 1341.
- (1996) J. Electron. Mater. , vol.25 , pp. 1341
- De Lyon, T.J.¹ Rajavel, R.D.² Jensen, J.E.³ Wu, O.K.⁴ Johnson, S.M.⁵ Cockrum, C.A.⁶ Venzor, G.M.⁷

12
- 0344862841
- N. Matsumura, T. Ohshima, J. Saraie, Y. Yodogawa, J. Crystal Growth 71 (1985) 361.
- (1985) J. Crystal Growth , vol.71 , pp. 361
- Matsumura, N.¹ Ohshima, T.² Saraie, J.³ Yodogawa, Y.⁴

13
- 0007480562
- I.B. Bhat, Wen-Sheng Wang, Appl. Phys. Lett. 64 (1994) 566.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 566
- Bhat, I.B.¹ Wang, W.-S.²

14
- 11544357016
- to be published
- J.P. Zanatta, P. Duvaut, P. Ferret, A. Million, G. Destefanis, P. Rambaud, C. Vannufel, to be published.
- Zanatta, J.P.¹ Duvaut, P.² Ferret, P.³ Million, A.⁴ Destefanis, G.⁵ Rambaud, P.⁶ Vannufel, C.⁷

15
- 0013116376
- S. Sivananthan, X. Chu, J. Reno, J.P. Faurie, J. Appl. Phys. 60 (1986) 1359.
- (1986) J. Appl. Phys. , vol.60 , pp. 1359
- Sivananthan, S.¹ Chu, X.² Reno, J.³ Faurie, J.P.⁴

16
- 36549097391
- R. Sporken, S. Sivananthan, K.K. Mahavadi, G. Monfroy, M. Boukerche, J.P. Faurie, Appl. Phys. Lett. 55 (1989) 1879.
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1879
- Sporken, R.¹ Sivananthan, S.² Mahavadi, K.K.³ Monfroy, G.⁴ Boukerche, M.⁵ Faurie, J.P.⁶

17
- 0028699285
- Y.P. Chen, J.P. Faurie, S. Sivanathan, SPIE 2228 (1994) 54.
- (1994) SPIE , vol.2228 , pp. 54
- Chen, Y.P.¹ Faurie, J.P.² Sivanathan, S.³

18
- 0026371337
- G.L. Destefanis, Semicond. Sci. Technol. 6 (1991) C88.
- (1991) Semicond. Sci. Technol. , vol.6
- Destefanis, G.L.¹

19
- 0000124511
- R.D. Bringans, D.K. Biegelsen, L.E. Swartz, F.A. Fence, J.C. Tramontana, Phys. Rev. B 45 (1992) 13400.
- (1992) Phys. Rev. B , vol.45 , pp. 13400
- Bringans, R.D.¹ Biegelsen, D.K.² Swartz, L.E.³ Fence, F.A.⁴ Tramontana, J.C.⁵

20
- 0027558229
- R.D. Bringans, D.K. Biegelsen, J.E. Northrup, L.E. Swartz, Jpn. J. Appl. Phys. 32 (1993) 1484.
- (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 1484
- Bringans, R.D.¹ Biegelsen, D.K.² Northrup, J.E.³ Swartz, L.E.⁴

21
- 0030562161
- A. Million, N.K. Dahr, J.H. Dinan, J. Crystal Growth 159 (1996) 76.
- (1996) J. Crystal Growth , vol.159 , pp. 76
- Million, A.¹ Dahr, N.K.² Dinan, J.H.³

22
- 0029304778
- W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Schaake, J. Electron. Mater. 24 (1995) 505.
- (1995) J. Electron. Mater. , vol.24 , pp. 505
- Everson, W.J.¹ Ard, C.K.² Sepich, J.L.³ Dean, B.E.⁴ Neugebauer, G.T.⁵ Schaake, H.F.⁶

23
- 0009649931
- A.C. Chami, E. Ligeon, R. Danielou, J. Fontenille, Appl. Phys. Lett. 52 (1988) 1502.
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1502
- Chami, A.C.¹ Ligeon, E.² Danielou, R.³ Fontenille, J.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.