MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 705-711

  De Lyon, T J ^a   Jensen, J E ^a   Gorwitz, M D ^a   Cockrum, C A ^b   Johnson, S M ^b   Venzor, G M ^b  

^a Hughes Aircraft Co   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DEPOSITION; DISLOCATIONS (CRYSTALS); INFRARED DETECTORS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

INFRARED FOCAL PLANE ARRAYS (IRFPA); MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0032633327     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0058-2     Document Type: Article

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