SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 31, Issue 3, 2002, Pages 220-226

Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors

(7) De Lyon, T J a Jensen, J E a Kasai, I b Venzor, G M b Kosai, K b De Bruin, J B b Ahlgren, W L c

a Hughes Aircraft Co (United States)

b RAYTHEON COMPANY (United States)

c CALIFORNIA POLYTECHNIC STATE UNIVERSITY (United States)

Author keywords

Detectors; HgCdTe; Molecular beam epitaxy (MBE); Photodiodes

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ENERGY GAP; EPITAXIAL GROWTH; INFRARED DETECTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ABSORBING LAYER INTERFACE; BUFFER LAYER INTERFACE; DIFFUSION CURRENT; EPITAXIAL STRUCTURES; GROWTH INITIATION INTERFACE; LATERAL OPTICAL COLLECTION; MIDWAVE INFRARED DETECTOR; SPECTRAL RESPONSE; SUBSTRATE INITIATION INTERFACE; WIDE BANDGAP BUFFER LAYER;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0036501966 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0210-8 Document Type: Article

Times cited : (17)

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