Composition control and surface defects of MBE-grown HgCdTe

Journal of Crystal Growth

Volumn 227, Issue 228, 2001, Pages 677-682

  He, L ^a   Wu, Y ^a   Chen, L ^a   Wang, S L ^a   Yu, M F ^a   Qiao, Y M ^a   Yang, J R ^a   Li, Y J ^a   Ding, R J ^a   Zhang, Q Y ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B1. Tellurites; B2. Semiconducting II VI materials; B3. Infrared devices

Indexed keywords

COMPOSITION CONTROL;

COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SUBSTRATES;

SEMICONDUCTING FILMS;

EID: 0141685390     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00801-6     Document Type: Article

References (13)