Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 310-314

  Sawada, Ken ^a   Arai, Tomoyuki ^a   Takahashi, Tsuyoshi ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Current control; HEMT; Hysteresis; Impact ionization; Kink; MODFET; Ohmic

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CURRENT CONTROL; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; HOLE TRAPS; HYSTERESIS; IMPACT IONIZATION; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS;

KINK PHENOMENA;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038056348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808555     Document Type: Article

References (12)

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