Influence of hole accumulation on source resistance, kink effect and on-state breakdown of InP-based high electron mobility transistors: Light irradiation study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1104-1107

  Suemitsu, Tetsuya ^a   Fushimi, Hiroshi ^a   Kodama, Satoshi ^a   Tsunashima, Satoshi ^a   Kimura, Shunji ^a  

^a NTT CORPORATION   (Japan)

Author keywords

HEMT; Impact ionization; InGaAs; InP; Light irradiation

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; IMPACT IONIZATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HOLE ACCUMULATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036478696     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1104     Document Type: Conference Paper

References (11)