Very high growth rate chemical vapor deposition of single-crystal diamond

Proceedings of the National Academy of Sciences of the United States of America

Volumn 99, Issue 20, 2002, Pages 12523-12525

  Yan, Chih Shiue ^a   Vohra, Yogesh K ^b   Mao, Ho Kwang ^a   Hemley, Russell J ^a  

^a GEOPHYSICAL LABORATORY   (United States)

^b UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND;

ARTICLE; CRYSTAL; DEVICE; ELECTRONICS; GROWTH RATE; MICROWAVE RADIATION; PRIORITY JOURNAL; SURFACE PROPERTY;

EID: 0036789915     PISSN: 00278424     EISSN: None     Source Type: Journal    
DOI: 10.1073/pnas.152464799     Document Type: Article

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