Channel mobility in AlGaN/GaN HFETs on SiC and sapphire substrates

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 468-471

  Uren, M J ^a   Martin, T ^a   Hughes, B T ^a   Hilton, K P ^a   Wells, A ^b   Balmer, R S ^a   Herbert, D C ^a   Keir, A M ^a   Wallis, D J ^a   Pidduck, A J ^a   Missous, M ^b  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; CHANNEL MOBILITY; DEEP LEVEL DEFECT DENSITIES; GATE VOLTAGE; SURFACE ELECTRIC FIELD;

FIELD EFFECT TRANSISTORS;

EID: 0036960167     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<468::AID-PSSA468>3.0.CO;2-W     Document Type: Article

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