The diamond Irvin curve

Diamond and Related Materials

Volumn 6, Issue 2-4, 1997, Pages 308-313

  Werner, M ^a   Locher, R ^b   Kohly, W ^a   Holmes, D S ^c   Klose, S ^d   Fecht, H J ^d  

^a VDI/VDE IT   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c Lake Shore Cryotronics Inc   (United States)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Carrier doping concentration; Irvin curve; Polycrystalline diamond; Resistivity

Indexed keywords

EID: 0000132267     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(96)00683-8     Document Type: Article

References (52)

1. M. Werner, R. Job, A. Zaitsev, W.R. Fahrner, W. Seifert, C. Johnston and P.R. Chalker, Phys. Stat. Sol. (a), 154 (1996) 385.
2. R. Locher, J. Wagner, F. Fuchs, M. Maier, P. Gonon and P. Koidl, Diamond Relat. Mater., 4 (1995) 678.
3. D.M. Malta. J.A. von Windheim, H.A. Wynands and B.A. Fox, J. Appl. Phys., 77 (4) (1995) 1536.
4. A.T. Collins and A.W.S. Williams, J. Phys., C4 (1971) 1789.
5. G. Braunstein and R. Kalish, J. Appl. Phys., 54 (4) (1983) 2106.
6. A.S. Vishnevskii, A.G. Gontar, V.I. Torishnii and A.A. Shul'zhenko, Sov. Phys. Semicond., 15 (6) (1981) 659.
7. N. Fujimori, T. Imai, H. Nakahata, H. Shiomi and Y. Nishibayashi, in J.T. Glass, R. Messier, N. Fujimori (eds.), Mater. Res. Soc., 164 (1990) 23.
8. M.W. Geis, in J.T. Glass, R. Messier, N. Fujimori (eds.), Mater. Res. Soc., 164 (1990) 15.
9. K. Okano, H. Naruki, Y. Akiba, T. Kurosu, M. Iida, Y. Hirose and T. Nakamura, Jpn. J. Appl. Phys., 28 (6) (1989) 1066.
10. B. Massarani, J.C. Bourgoin and R.M. Chrenko, Phys. Rev. B, 17 (4) (1978) 1758.
11. K. Nishimura, K. Das and J.T. Glass, J. Appl Phys., 69 (5) (1991) 3142.
12. A. Otsuki, J. Nakanishi, G. Kawaguchi, T. Oku, M. Murakami, in S. Saito, N. Fujimori, O. Fukunga, M. Kamo, K. Kobashi and M. Yoshikawa (eds.), Advances in New Diamond Science and Technology MYU, Tokyo, 1994, p. 713.
13. H. Shiomi, Y. Nishibayashi and N. Fujimori, Jpn. J. Appl. Phys., 30 (9) (1991) 1363.
14. P.T. Wedepohl, Proc. Phys. Soc. London B, 70 (1957) 177.
15. A.E. Aleksenko, V.S. Vavilov, B.V. Deyagin, M.A. Gukasyan, T.A. Karatygina, E.A. Konorova, V.F. Sergienko, B.V. Spitsyn and S.D. Tkachenko, Sov. Phys. Dokl., 22 (3) (1977) 166.
16. S.A. Grot, C.W. Hatfield, G.Sh. Gildenblat, A.R. Badzian and T. Badzian, Sci. Technology, Sept. 23-27, 1990 Washington, DC, USA.
17. I.G. Austin and R. Wolfe, Proc. Phys. Soc. London B, 69 (1956) 329-338.
18. J.E. Field (ed.), The Properties of Diamonds, Academic Press, New York, 1979.
19. V. Venkatesan and K. Das, IEEE Elec. Dev. Lett., 13 (2) (1992) 126-128.
20. S.A. Grot, The Electrical Properties and Device Applications of Homoepitaxial and Polycrystalline Diamond Films, The Pennsylvania State University-Department of Electrical and Computer Engineering, Dissertation thesis, 1992, UMI Dissertation Information Service, Order Number 9236833.
21. G.G. Fountain, R.A. Rudder, S.V. Hattangady and R.J. Markerno, Fabrication and Testing of a Diamond, Abstract No. 141 Extended Abstracts Vol.91-1, Spring Meeting Washington, DC, May 5-10, 1991, The Electrochemical Society, Inc.
22. R. Kalish, C. Uzan-Saguy, A. Samoiloff, R. Locher and P. Koidl, Appl. Phys. Lett., 64 (19) (1994) 2532.
23. V.S. Vavilov, M.A. Gukasyan, M.I. Guseva, T.A. Koratygina and E.A. Konorova, Sov. Phys. Semicond., 8 (4) (1974) 471.
24. V. Venkatesan, D.M. Malta, K. Das and A.M. Belu, J. Appl. Phys., 74 (2) (1993) 1179.
25. P.J. Dean, E.C. Lightowlers and D.R. Wright, Phys. Rev., 140 (1A) (1965) A 352.
26. X. Jiang, E. Boettger, C.-P. Klages, M. Paul and R. Six, BMBF-Report, 1994, p. 47.
27. T. Borst, Phd. Thesis, Dotierte homoepitaktische Diamantschichten, Universität Ulm, Abteilung Festkörperphysik, 1995.
28. M.I. Landstrass, M.A. Plano and D. Moyer, J. Elec. Soc. Ext. Abstr., 91-1 (1991) 195.
29. P.I. Baranskii, V.G. Malogolovets, V.I. Torishinii and G.V. Chipenko, Sov. Phys. Semicond., 21 (1) (1987) 45.
30. J.J. Brophy, Phys. Rev., 99 (1955) 1336.
31. B.R. Stoner, Chien-teh Kao, D.M. Malta and R.C. Glass, Appl. Phys. Lett., 62 (19) (1993) 2347.
32. J.A. von Windheim, V. Venkatesan, D.M. Malta and K. Das, J. Elec. Mater., 22 (4) (1993) 391.
33. N. Fujimori, H. Nakahata and T. Imai, Jpn. J. Phys., 29 (1990) 824.
34. J.C. Bourgoin, J. Krynicki and B. Blanchard, Phys. Stat. Sol. (a), 52 (1979) 293.
35. H. Kiyota, H. Okushi, T. Ando, M. Kamo and Y. Sato, Characterization of homoepitaxially grown diamond (001) film, Diamond Films '95, Barcelona Hilton Hotel, Barcelona (Spain), 10-15 Sept., 1995.
36. J. Mort, K. Okumura and M. Machonkin, Phil. Mag. B, 63 (5) (1991) 1031.
37. J.L. Davidson, D.R. Wur, W.P. Kang, D. Kinser, D.V. Kerns, J.P. Wang and Y.C. Ling, in S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi and M. Yoshikawa (eds.), Advances in New Diamond Science and Technology, MYU, Tokyo, 1994, p. 693.
38. T. Sugino, K. Karasutani, H. Kataoka, K. Kobashi and J. Shirafuji, in S. Saito, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi and M. Yoshikawa (eds.), Advances in New Diamond Science and Technology, MYU, Tokyo, 1994, p. 705.
39. E.P. Visser, G.J. Bauhuis, G. Janssen, W. Vollenberg, W.J.P. van Enckevort and L.J. Gilling, J. Phys.: Condens. Matter, 4 (1992) 7365.
40. G. Janssen, G.Z. Cao, J. te Nijenhuis, G.J. Bauhuis, L.J. Gilling and R.C.M. de Kruif, presented at Diamond Films '95, Barcelona Hilton Hotel, Barcelona, Spain, 10-15 Sep. 1995.
41. A. Masood, M. Aslam, M.A. Tamor and T.J. Potter, Appl. Phys. Lett., 61 (15) (1992) 1832.
42. M. Deguchi and M. Kitabatake, presented at Diamond Films '95, Barcelona Hilton Hotel, Barcelona, Spain, 10-15 Sept. 1995.
43. S.A. Grot, C.W. Hatfield, G.Sh. Gildenblat, A.P. Badzian and T. Badzian, Appl. Phys. Lett., 58 (14) (1991) 154.
44. C. Johnson, H. Stein, T. Young, J. Wayland and W. Leivo, J. Phys. Chem. Sol., 25 (1964) 827.
45. F. Fontaine, C. Uzan-Saguy, B. Philosoph and R. Kalish, Appl. Phys. Lett., 68 (16) (1996) 2264.
46. O.G. Revin and V.N. Slesarev, Sov. Phys. Semicond., 16 (12) (1982) 1436.
47. E. Yasn, N. Ohashi, T. Ando, J. Tanaka, M. Kamo, Y. Sato and H. Kiyota, Diamond Relat. Mater., 4 (1994) 59.
48. X.K. Zhang, J.G. Guo, Y.F. Yao, R. Wang, G.M. Chen, W.K. Zhou and S. Yu, Appl. Phys. A, 56 (1993) 425.
49. B.V. Spitsyn, A.E. Alexenko, G.A. Sokoline and V.A. Laptev, New Diamond Science and Technology, MRS Int. Conf. Proc., 1991, p. 909.
50. A. Vescan, private communication.
51. B.I. Shoklovskii and I.S. Shlimak, Sov. Phys. Semicond., 6 (1) (1972) 104.
52. A. Miller and E. Abrahams, Phys. Rev., 120 (3) (1960) 745.