Channel width dependence of NMOSFET hot carrier degradation

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1545-1548

  Li, Erhong ^a   Prasad, Sharad ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

Channel width; Enhanced degradation; Hot carrier degradation; Impact ionization; Vertical electric field

Indexed keywords

CHANNEL CAPACITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION;

CHANNEL WIDTH;

MOSFET DEVICES;

EID: 0043166501     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813342     Document Type: Article

References (20)

1. V. Srinivasan and J. J. Barnes, "Small width effects on MOSFET hot-electron reliability," in IEDM Tech Dig., 1980, pp. 740-743.
2. M. Bourcherie, B. S. Doyle, J. C. Marchetaux, A. Boudou, and H. Mingam, "Hot-carrier stressing damage in wide and narrow LDD NMOS transistors," Electron Device Lett., vol. 10, pp. 132-134, Mar. 1989.
3. Y. Nishioka, K. Ohyu, Y. Ohji, and T.-P. Ma, "Channel length and width dependence of hot carrier hardness in fluorinated MOSFETs," Electron. Device Lett., vol. 10, pp. 540-542, 1989.
4. M. Nishigohri, K. Ishimaru, M. Takahashi, Y. Unno, Y. Okayama, F. Matsuoka, and M. Kinugawa, "Anomalous hot-carrier induced degradation in very narrow channel nMOSFETs with STI structure," in IEDM Tech Dig., 1996, pp. 881-884.
5. H. Hwang, J. Lee, P. Fazan, and C. Dennison, "Hot-carrier reliability characteristics of narrow-width MOSFETs," Solid-State Electron., vol. 36, pp. 665-666, 1993.
6. W. Lee, S. Lee, T. Ahn, and H. Hwang, "Degradation of hot carrier life-time for narrow width MOSFET with shallow trench isolation," in Proc. IEEE Int. Rel. Phys. Symp., 1999, pp. 259-262.
7. C. Mazure, A. Lili, and C. Zeller, "Width-independent narrow nMOSFET reliability by split-well drive-in," Electron Device Lett., vol. 11, pp. 224-226, May 1990.
8. J. M. P. Yue, W. K. Chim, B. J. Cho, D. S. H. Chan, W. H. Qin, Y.-B. Kim, S.-A. Jang, and I.-S. Yeo, "Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure," Electron Device Lett., vol. 21, pp. 130-132, Mar. 2000.
9. P. Heremans, R. Bellens, G. Groeseneken, and H. E. Maes, "Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs," IEEE Trans. Electron Devices, vol. 35, pp. 2194-2209, Dec. 1988.
10. d) during hot-carrier stressing of n-MOS transistors," IEEE Trans. Electron Devices, vol. 37, pp. 744-754, Mar. 1990.
11. S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, "Quasibreakdown of ultrathin gate oxide under high field stress," in IEDM Tech Dig., 1994, pp. 605-608.
12. Y. Y. Chen, I. M. Liu, M. Gardner, J. Fulford, and D. L. Kwong, "Performance and reliability assessment of dual-gate cMOS devices with gate oxide grown on nitrogen implanted Si substrates," in IEDM Tech Dig., 1997, pp. 639-642.
13. M. Takayanagi-Takagi, H. Yoshimura, and Y. Toyoshinma, "Increase of parasitic resistance of p-MOSFETs due to nitrogen atoms incorporation into silicon substrate by N2O-Oxynitride gate dielectrics process," in IEDM Tech Dig., 1997, pp. 235-238.
14. T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, "Isolation edge effect depending on gate length of MOSFETs with various isolation structures," IEEE Trans. Electron Devices, vol. 47, pp. 822-827, Apr. 2000.
15. E. Li, E. Rosenbaum, J. Tao, and P. Fang, "Projecting lifetime of deep submicron MOSFETs," IEEE Trans. Electron Devices, vol. 48, pp. 671-678, Apr. 2001.
16. C. Hu, S. C. Tan, F.-C. Hsu, P.-K. Ko, T.-Y. Chang, and K. W. Terrill, "Hot-electron-induced MOSFET degradation - Model, monitor, and improvement," IEEE Trans. Electron Devices, vol. 32, pp. 375-385, Feb. 1985.
17. Y. H. Lee, K. Wu, T. Linton, N. Miekle, S. Hu, and B. Wallace, "Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs," in Proc. IEEE Int. Rel. Phys. Symp., 2000, pp. 77-82.
18. J. Chung, M. C. Jeng, G. May, P. K. Ko, and C. Hu, "Hot-electron currents in deep-submicrometer MOSFETs," in IEDM Tech Dig., 1988, pp. 200-203.
19. H. Hwang, H. Shin, D.-G. Kang, and D. Hyuk Ju, "Current-crowding effect in diagonal MOSFETs," IEEE Electron Device Lett., vol. 14, pp. 289-291, June 1993.
20. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1985.