Charge pumping study of hot-carrier induced degradation of sub-100 nm partially depleted SOI MOSFETS

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 43-44

  Chan, Jay ^a   Zhao, Eugene Xuejun ^a   Sinha, Shankar P ^a   Marathe, Amit ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY; STRESS ANALYSIS; THRESHOLD VOLTAGE;

CHARGE PUMPING (CP); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

MOSFET DEVICES;

EID: 0036454455     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044409     Document Type: Conference Paper

References (5)

1. E.-X. Zhao, etc, 2001 IEEE Intl SOI Conference, Page(s): 121-122.
2. P. Aminzadeh, etc, 1998 VLSI, pp 178-9.
3. W. Wang, etc IEEE Intl Integrated Reliability Workshop Final Report, 1999, Page(s) 66-68.
4. S.P. Sinha et al., Proc. of 1996 IEEE Intl. SOI Conf., Oct. 1996.
5. D. Wouters, IEEE Trans. ED, pp1746-50, 1989.