The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures

Journal De Physique. IV : JP

Volumn 12, Issue 3, 2002, Pages

  Dieudonne F ^a   Jomaah, J ^a   Raynaud, C ^a   Balestra, F ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; LOW TEMPERATURE PHENOMENA; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CRYOGENIC TEMPERATURE; DRIVING CURRENT; EXTERNAL BODY BIAS;

MOSFET DEVICES;

EID: 0036564467     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp420020027     Document Type: Conference Paper

References (5)

1. The role of externally applied body-pias on the hot-carrier degradation of partially depleted SOI N-MOSFETs
2. Generation of hot carriers by secondary impact ionization in deep submicron devices: Model and light emission characterization
3. Hot carrier effects in sub-0.1 μm MOSFETs