Worst case conditions for hot-carrier induced degradation of sub-100nm partially depleted SOI MOSFET's

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 121-122

  Zhao, E X ^a   Sinha, S P ^a   Ju, D H ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; STRESSES; SUBSTRATES;

POWER LAW;

MOSFET DEVICES;

EID: 0035168480     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)