Hot carrier degradation for narrow width MOSFET with shallow trench isolation

Microelectronics Reliability

Volumn 40, Issue 1, 2000, Pages 49-56

  Lee, Woosung ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; SUBSTRATES;

SHALLOW TRENCH ISOLATION (STI);

MOSFET DEVICES;

EID: 0033905735     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00222-x     Document Type: Article

References (6)

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2. Nishigohri M, Ishimaru K, Takahashi M, Unno Y, Okayama Y, Matsuoka F, Kinugawa M. In: Proc. International Electron Device Meeting, IEDM96, December. 1996. p. 881-4.
3. Chen JF, Ishimaru K, Hu C. Enhanced hot-carrier degradation in shallow trench isolated narrow channel PMOSFET's. IEEE Electron Device Letter 1998;19:332-4.
4. Hwang H, Shin H, Kang DG, Ju DH. Current crowding effect in diagonal MOSFETs. IEEE Electron Device Letter 1993;14:289-91.
5. Chung J, Jeng MC, May G, Ko PK, Hu C. Hot electron currents in deep-submicrometer MOSFET. In: Proc. International Electron Device Meeting, IEDM88, December. 1988. p. 200-3.
6. Ohzone T, Iwata H, Uraoka Y, Odanaka S. In: Proc. International Electron Device Meeting, IEDM92, December. 1992. p. 527-30.