Hot-carrier-induced degradation on 0.1 μm SOI CMOSFET

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 107-108

  Yeh, Wen Kuan ^a   Wang, Wen Han ^b   Fang, Yean Kuen ^b   Yang, Fu Liang ^c  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TUNNELING; HOT CARRIERS; MOSFET DEVICES;

JUNCTION CAPACITANCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036458771     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. E. Leobandung, et al., in IEDM Tech. Dig., 1998, p. 403.
2. S.-H. Renn et al., IEEE Trans Electron Devices, p. 2335, 1998.
3. W.-K. Yeh, IEEE Electron Devices Lett., p.339, 2000.
4. C.W. Tsai, T. Wang, in proc. IEDM Tech. Dig., 2000, p.66.
5. J. Woo, in proc. IEDM Tech. Dig., 1995, pp.639.