SCOPUS 정보 검색 플랫폼

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 93-97

Generation of hot carriers by secondary impact ionization in deep submicron devices: Model and light emission characterization

(6) Marchand, B a,b Blachier, D c Leroux, C c Ghibaudo, G a Balestra, F a Reimbold, G c

a Grenoble INP Phelma (France)

b Z A Le Parvis (France)

c CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; IMPACT IONIZATION; LIGHT EMISSION; PHOTONS; SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

SECONDARY IMPACT IONIZATION;

MOS DEVICES;

EID: 0033732345 PISSN: 00999512 EISSN: None Source Type: Journal
DOI: 10.1109/RELPHY.2000.843896 Document Type: Article

Times cited : (7)

References (10)

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2
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3
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4
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5
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6
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7
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- Lucky electron model of channel hot electron injection in MOSFETs
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8
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9
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10
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