Reactive ion etching of 193-nm resist candidates: Current platforms and future requirements

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 92-101

  Wallow, Thomas I ^a   Brock, Phillip J ^a   Di Pietro, Richard A ^a   Allen, Robert D ^a   Opitz, Juliann ^a   Sooriyakumaran, Ratnam ^a   Hofer, Donald C ^a   Meute, Jeff ^b   Byers, Jeff D ^b   Rich, Georgia K ^b   McCallum, Martin ^b   Schuetze, S ^b   Jayaraman, Saikumar ^c   Hullihen, Karen A ^c   Vicari, Richard ^c   Rhodes, Larry F ^c   Goodall, Brian L ^c   Shick, Robert A ^c  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b SEMATECH   (United States)

^c GOODRICH CORPORATION   (United States)

Author keywords

193 nm photoresist; Cyclic olefin; Etch resistance; Methacrylate

Indexed keywords

CONCRETES; OLEFINS; PHOTORESISTORS; PHOTORESISTS; REACTIVE ION ETCHING; SURFACE TREATMENT;

193 NM PHOTORESIST; 193-NM RESISTS; COMPLEX NATURES; CYCLIC OLEFIN; DEPENDENT PROCESS; ETCH RATES; ETCH RESISTANCE; EXPERIMENTAL DESIGNS; GLOBAL TRENDS; METHACRYLATE; NEW MODELS; OFFSET CURVES; POLIES (METHACRYLATES); POLYMER PLATFORMS; POLYMER STRUCTURES; QUANTITATIVE PREDICTIONS; REACTIVE IONS; STRUCTURAL PARAMETERS;

FUNCTIONAL POLYMERS;

EID: 60849129827     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312362     Document Type: Conference Paper

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37. A full disclosure of these results will be presented elsewhere.
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