Comparison of CCD Damage Due to 10- and 60-MeV Protons

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1960-1967

  Hopkinson, Gordon R ^a   Mohammadzadeh, Ali ^b  

^a Sira Ltd   (United Kingdom)

^b EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

Charge coupled devices (CCDs); Displacement; Proton; Radiation

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; CHARGE TRANSFER; CRYSTAL DEFECTS; PROTON IRRADIATION; PROTONS; RADIATION DAMAGE;

NONIONIZING ENERGY LOSS (NIEL); PROTON ENERGY;

HIGH ENERGY PHYSICS;

EID: 1242265275     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821409     Document Type: Conference Paper

References (38)

1. C. J. Marshall and P. W. Marshall, "Proton effects and test issues for satellite designers, part B: displacement damage effects," in 1999 IEEE NSREC Short Course Notes, pp. IV-50-IV-110.
2. G. R. Hopkinson, C. J. Dale, and P. W. Marshall, "Proton effects in CCDs," IEEE Trans. Nucl. Sci., vol. 43, pp. 614-627, Apr. 1996.
3. J. C. Pickel, A. H. Kalma, G. R. Hopkinson, and C. J. Marshall, "Radiation effects on photonic imagers - a historical perspective," IEEE Trans. Nucl. Sci., vol. 50, pp. 671-688, June 2003.
4. M. Giavalisco, "Minimizing CTE Losses in the WFC3 CCDs: Post Flash vs. Charge Injection," Space Telescope Science Institute, Instrument Science Report WFC3 2003-01.
5. G. P. Summers, E. A. Burke, P. Shapiro, S. C. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, Dec. 1993.
6. C. Dale, P. Marshall, B. Cummings, L. Shamey, and A. Holland, "Displacement damage effects in mixed particle environments for shielded spacecraft CCDs," IEEE Trans. Nucl. Sci., vol. 40, pp. 1628-1637, Dec. 1993.
7. R. Germanicus et al., "Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage," IEEE Trans. Nucl. Sci., vol. 49, pp. 2830-2835, Dec. 2002.
8. C. J. Dale, L. Chen, P. J. McNulty, P. W. Marshall, and E. A. Burke, "A comparison of Monte Carlo and analytical treatments of displacement damage in Si microvolumes," IEEE Trans. Nucl. Sci., vol. 41, pp. 1974-1983, 1994.
9. A. Akkerman et al., "Updated NIEL calculations for estimating the damage induced by particles and g rays in Si and GaAs," Rad. Phys. Chem., vol. 62, pp. 301-310, 2001.
10. I. Jun et al., "Proton nonionizing energy loss (NIEL) for device applications," in IEEE Nuclear and Space Radiation Effects Conference, Monterey, CA, July 2003.
11. M. Huhtinen, "Simulation of non-ionising energy loss and defect formation in silicon," Nucl. Instrum. Methods A, vol. 491, pp. 194-215, 2002.
12. G. R. Hopkinson, Radiation testing of CCD and APS imaging devices, in European Space Agency Contract Report 14028/99/NL/MM, June 2003.
13. _, "Proton damage effects on p-channel CCDs," IEEE Trans. Nucl. Sci., vol. 46, pp. 1790-1796, Dec. 1999.
14. A. Waczynski et al., "A comparison of charge transfer efficiency measurement techniques on proton damaged CCDs for the hubble space telescope wide-field camera 3," IEEE Trans. Nucl. Sci., vol. 48, pp. 1807-1814, Dec. 2001.
15. J. R. Janesick, Scientific Charge-Coupled Devices. Bellingham, U.K.: SPIE Press, 2001, ch. 5.
16. P. W. Marshall, C. J. Dale, and E. A. Burke, "Proton-induced displacement damage distributions in silicon microvolumes," IEEE Trans Nucl. Sci., vol. 37, pp. 1776-1783, Dec. 1990.
17. M. S. Robbins, "High-energy proton-induced dark signal in silicon charge coupled devices," IEEE Trans Nucl. Sci., vol. 47, pp. 2473-2479, Dec. 2000.
18. J. R. Srour and D. H. Lo, "Universal damage factor for radiation-induced dark current in silicon devices," IEEE Trans. Nucl. Sci., vol. 47, pp. 2451-2459, Dec. 2000.
19. A. D. Holland, "Annealing of proton-induced displacement damage in CCDs for space use," in Proc 10th Symp. Photoelectronic Image Devices, Inst. Phys. Conf. Ser. No. 121, 1992, pp. 33-40.
20. J. W. Corbett et al., "The status of defect studies in silicon," in Inst. Phys. Conf. Ser. No. 31, 1977, pp. 1-11.
21. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley-Interscience, 1981, p. 90.
22. -2," Nucl. Instrum. Methods B, vol. 132, pp. 439-446, 1997.
23. +-irradiated silicon," Appl. Phys. A, vol. 65, pp. 403-406, 1997.
24. M. Ahmed, S. J. Watts, J. Matheson, and A. Holmes-Seidle, "Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation," Nucl. Instrum. Methods A, vol. 457, pp. 588-594, 2001.
25. 60Co gamma irradiated silicon detectors," Appl. Phys. Lett., vol. 81, no. 1, pp. 165-167, July 2002.
26. L. Sealy, R. C. Barklie, W. L. Brown, and D. C. Jacobson, "Annealing of defects created in silicon by MeV ion implantation," Nucl. Instrum. Methods B, vol. 80/81, pp. 528-531, 1993.
27. H. Lutgemeier and K. Schnitzke, "Paramagnetic centres in proton-irradiated silicon," Phys. Lett., vol. 25A, no. 3, pp. 232-233, 1967.
28. B. J. F. Coomer, "A First Principles Study of Radiation Defects in Semiconductors," Ph.D. dissertation, Univ. of Exeter, UK, Nov. 2000.
29. J. R. Troxell, "Ion-implantation associated defect production in silicon," Solid State Electron., vol. 26, no. 6, pp. 539-548, 1983.
30. I. H. Hopkins and G. R. Hopkinson, "Further measurements of random telegraph signals in proton irradiated CCDs," IEEE Trans. Nucl Sci., vol. 42, pp. 2074-2081, Dec. 1995.
31. E. G. Sieverts and J. W. Corbett, "The neutral divacancy in silicon," Solid State Commun., vol. 43, no. 1, pp. 41-46, 1982.
32. J. Kim et al., "Thermally activated reorientation of di-interstitial defects in silicon," Phys. Rev. Lett., vol. 83, pp. 1990-1993, 1999.
33. K. P. Klaasen et al., "Inflight performance characteristics, calibration, and utilization of the Galileo SSI camera," Opt. Eng., vol. 36, pp. 3001-3027, 1997.
34. I. H. Hopkins, G. R. Hopkinson, and B. Johlander, "Proton-induced charge transfer degradation in CCDs for near-room temperature applications," IEEE Trans. Nucl. Sci., vol. 41, pp. 1984-1990, Dec. 1994.
35. J. E. Brau and N. Sinev, "Operation of a CCD particle detector in the presence of bulk neutron damage," IEEE Trans. Nucl. Sci., vol. 47, pp. 1898-1901, Dec. 2000.
36. C. Bebek et al., "Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon," IEEE Trans. Nucl. Sci., vol. 49, pp. 1221-1225, June 2002.
37. G. R. Hopkinson, "Proton-induced charge transfer degradation at low operating temperatures," IEEE Trans. Nucl. Sci., vol. 48, pp. 1790-1795, Dec. 2001.
38. _, "Proton-induced changes in CTE for n-channel CCDs and the effect on star tracker performance," IEEE Trans. Nucl. Sci., vol. 47, pp. 2460-2465, Dec. 2000.