Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs

Radiation Physics and Chemistry

Volumn 62, Issue 4, 2001, Pages 301-310

  Akkerman, A ^a   Barak, J ^a   Chadwick, M B ^b   Levinson, J ^a   Murat, M ^a   Lifshitz, Y ^a  

^a SOREQ NUCLEAR RESEARCH CENTER   (Israel)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Elastic and inelastic interactions; Non ionizing energy loss; Space radiation

Indexed keywords

ENERGY DISSIPATION; IONIZATION; NEUTRONS; PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

NON-IONIZING ENERGY LOSSES (NIEL);

GAMMA RAYS;

GALLIUM ARSENIDE; PROTON; SILICON;

ARTICLE; DATA ANALYSIS; ELECTRON; ENERGY; ENERGY TRANSFER; GAMMA RADIATION; LABORATORY TEST; MATHEMATICAL ANALYSIS; NEUTRON; NEUTRON RADIATION;

EID: 0034811916     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(01)00207-9     Document Type: Article

References (34)

1. Modeling of proton induced SEUs
2. Nuclear and damage effects in Si produced by irradiations with medium energy protons
3. Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage
4. Nucleon-nucleus optical-model parameters, A>40, E<50MeV
5. Polarization by mercury of 100 to 2000eV electrons
6. Use of new ENDF/B-VI proton and neutron cross section for single event upset calculations
7. Cross sections evaluation to 150MeV for accelerator-driven system and implementation in MCNPX
8. LA150 documentation of cross sections, heating, and damage: Part A (incident neutrons) and Part B (incident protons)
9. The generation lifetime damage constant and its variance
10. Displacement damage equivalent to dose in silicon devices
11. Analytic fitting to the Mott cross section of electrons
12. Proton effects and test issues for satellite designers, part B: Displacement effects
13. Non-ionizing Energy Loss (NIEL) for heavy ions
14. Electron scattering without atomic or nuclear excitation
15. Theory of multiple scattering: Second born approximation and corrections to Molière's work
16. Comparison of theoretical and empirical interatomic potentials
17. Comparison of proton and neutron carrier removal rates
18. Nuclear reactions in semiconductors
19. Comparison of neutron, proton and γ-ray effects in semiconductor devices
20. The influence of the scattering law on the radiation damage displacement cascade. II
21. Comparison of radiation damage in silicon induced by proton and neutron irradiation
22. Damage correlations in semiconductors exposed to γ, electron and proton radiations
23. Total reaction cross section calculations in proton-nucleus scattering