Defect levels of proton-irradiated silicon with a dose of 3.6 × 1013 cm-2

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 132, Issue 3, 1997, Pages 439-446

  Schmidt, D C ^a   Barbot, J F ^a   Blanchard, C ^a   Ntsoenzok, E ^b  

^a Lab de Métallurgie Physique   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

Annealing; Deep level; DLTS; Hydrogen; Irradiation; Trap

Indexed keywords

ANNEALING; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; HYDROGEN; ION IMPLANTATION; PROTONS;

ELECTRON TRAPS; HOLE TRAPS; VACANCY DEFECTS;

SEMICONDUCTING SILICON;

EID: 0031269439     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00392-3     Document Type: Article

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