Studies of deep levels in He+-irradiated silicon

Applied Physics A: Materials Science and Processing

Volumn 65, Issue 4-5, 1997, Pages 403-406

  Schmidt, D C ^a   Barbot, J F ^a   Blanchard, C ^a   Desgardin, P ^b   Ntsoenzok, E ^b   Blondiaux, G ^b  

^a Faculté des Sciences   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; HELIUM; ION IMPLANTATION;

CAPACITANCE VOLTAGE PROFILING;

SEMICONDUCTING SILICON;

EID: 0031246410     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050599     Document Type: Article

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