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Volumn 83, Issue 10, 1999, Pages 1990-1993
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Thermally activated reorientation of di-interstitial defects in silicon
a b a a b c |
Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000631952
PISSN: 00319007
EISSN: 10797114
Source Type: Journal
DOI: 10.1103/PhysRevLett.83.1990 Document Type: Article |
Times cited : (64)
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References (13)
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