Close to midgap trapping level in 60Co gamma irradiated silicon detectors

Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 165-167

  Pintilie, I ^a   Fretwurst, E ^b   Lindstrom G ^b   Stahl, J ^b  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b UNIVERSITY OF HAMBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE CROSS SECTIONS; DETECTOR PERFORMANCE; EFFECTIVE-DOPING CONCENTRATION; FLOAT ZONE SILICON; HIGH DOSE; IRRADIATED SILICON DETECTORS; TRAPPING LEVELS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DETECTORS; SPECTROSCOPIC ANALYSIS;

SILICON DETECTORS;

EID: 79956025335     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1490397     Document Type: Article

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