High-energy proton-induced dark signal in silicon charge coupled devices

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2473-2479

  Robbins, M S ^a  

^a E2V TECHNOLOGIES   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; IONIZATION; MATHEMATICAL MODELS; NEUTRON IRRADIATION; PROTON IRRADIATION; SEMICONDUCTING SILICON; TEMPERATURE;

DARK SIGNAL; INSULATOR OXIDES;

CHARGE COUPLED DEVICES;

EID: 0034452166     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903795     Document Type: Conference Paper

References (13)

1. Particle induced spatial dark current fluctuations in focal plane arrays
2. Proton induced displacement damage distributions and extremes in Si microvolumes
3. Proton induced displacement damage fluctuations in silicon microvolumes
4. The generation lifetime damage factor and its variance in silicon
5. A comparison of Monte Carlo and analytic treatments of displacement damage in Si microvolumes
6. Energy dependence of proton-induced displacement damage in silicon
7. Ionizing radiation induced surface effects in charge coupled devices
8. Radiation effects on CCD's for spaceborne acquisition and tracking applications
9. A new model for generation-recombination in silicon depletion regions after neutron irradiation
10. Further radiation evaluation of x-ray sensitive charge coupled devices for the XMM telescope
11. High energy electron induced displacement damage in silicon
12. Dark current in irradiated silicon devices: Origin and universal damage factor