Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon

IEEE Transactions on Nuclear Science

Volumn 49, Issue 3, 2002, Pages 1221-1225

  Bebek, C ^a   Groom, D ^a   Holland, S ^a   Karcher, A ^a   Kolbe, W ^a   Lee, J ^a   Levi, M ^a   Palaio, N ^a   Turko, B ^a   Uslenghi, M ^a   Wagner, M ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Charge coupled device (CCD); High resistivity silicon; Radiation damage

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; PROTON IRRADIATION; SEMICONDUCTING SILICON;

CHARGE TRANSFER EFFICIENCY; HIGH RESISTIVITY SILICON; PROTON RADIATION DAMAGE;

RADIATION DETECTORS;

EID: 0036624322     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039641     Document Type: Article

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