Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2830-2835

  Germanicus, R ^a   Barde, S ^b   Dusseau, L ^a   Rolland, G ^b   Barillot, C ^c   Saigne F ^d   Ecoffet, R ^b   Calvel, P ^c   Fesquet, J ^a   Gasiot, J ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b CNES   (France)

^c THALES ALENIA SPACE   (France)

^d UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

Author keywords

CCD; Displacement damage; DSNY; NIEL

Indexed keywords

DEGRADATION; METHOD OF MOMENTS; PROTON IRRADIATION; PROTONS; SILICON;

PROTON-NONIONIZING ENERGY;

CHARGE COUPLED DEVICES;

EID: 0036952413     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805554     Document Type: Conference Paper

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