Electrical and Luminescent Properties and the Spectra of Deep Centers in GaMnN/InGaN Light-Emitting Diodes

Journal of Electronic Materials

Volumn 33, Issue 3, 2004, Pages 241-247

  Polyakov, A Y ^a   Smirnov, N B ^b   Govorkov, A V ^a   Kim, Jihyun ^b   Ren, F ^b   Thaler, G T ^b   Frazier, R M ^b   Gila, B P ^b   Abernathy, C R ^b   Pearton, S J ^b   Buyanova, I A ^c   Rudko, G Y ^c   Chen, W M ^c   Pan, C C ^d   Chen, G T ^d   Chyi, J I ^d   Zavada, J M ^e  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c LINKÖPING UNIVERSITY   (Sweden)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Electroluminescence (EL); GaN InGaN; Light emitting diodes (LEDs)

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; LIGHT POLARIZATION; MAGNETIC FIELDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPIC ANALYSIS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

GAN/INGAN; PARASITIC JUNCTIONS; POLARIZATION MODULATION;

LIGHT EMITTING DIODES;

EID: 12144289337     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0186-7     Document Type: Article

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