Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 963-968

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kim, J ^b   Ren, F ^b   Overberg, M E ^b   Thaler, G T ^b   Abernathy, C R ^b   Pearton, S J ^b   Lee, C M ^c   Chyi, J I ^c   Wilson, R G ^d   Zavada, J M ^e  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d Consultant ^*  (United States)

^e U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HOLE TRAPS; ION IMPLANTATION; MANGANESE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

CONTACT LAYERS;

LIGHT EMITTING DIODES;

EID: 0037408999     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00463-X     Document Type: Article

References (31)

1. Theodoropoulou N.A., Hebard A.F., Chu S.N.G., Overberg M.E., Abernathy C.R., Pearton S.J.et al. Appl. Phys. Lett. 79:2001;3452.
2. Pearton S.J., Overberg M.E., Thaler G., Abernathy C.R., Theodoropoulou N.A., Hebard A.F.et al. J. Vac. Sci. Technol. A. 20:2002;583.
3. Sonoda S., Shimizu S., Sasaki T., Yamamoto Y., Hori H. J. Cryst. Growth. 237-239:2002;1358.
4. Das Sarma S. Am. Sci. 89:2001;516.
5. Wolf S.A., Awschalom D.D., Buhrman R.A., Daughton J.M., von Molnar S., Roukes M.L.et al. Science. 294:2001;1488.
6. Ohno H. J. Vac. Sci. Technol. B. 18:2000;2039.
7. Dietl T. J. Appl. Phys. 89:2001;7437.
8. Dietl T., Ohno H., Matsukura F., Cibert J., Ferrand D. Science. 287:2000;1019.
9. Reed M.K., El-Masry N.A., Stadelmaier H.H., Ritums M.K., Reed M.J., Parker C.A.et al. Appl. Phys. Lett. 79:2001;3473.
10. Thaler G.T., Overberg M.E., Gila B., Frazier R., Abernathy C.R., Pearton S.J.et al. Appl. Phys. Lett. 80:2002;3964.
11. Park S.E., Lee H.-J., Cho Y.C., Jeong S.-Y., Cho C.R., Cho S. Appl. Phys. Lett. 80:2002;4187.
12. Theodoropoulou N., Hebard A.F., Chu S.N.G., Overberg M.E., Abernathy C.R., Pearton S.J.et al. J. Appl. Phys. 91:2002;7499.
13. Sato K., Katayama-Yoshida H. Jpn. J. Appl. Phys. 40:2001;4485.
14. Katayama-Yoshida H., Kato R., Yamamoto T. J. Cryst. Growth. 231:2001;438.
15. Fong C.Y., Gubanov V.A., Boekema C. J. Electron. Mater. 29:2000;1067.
16. Akinaga H., Nemeth S., de Boeck J., Nistor L., Bender H., Borghs G.et al. Appl. Phys. Lett. 77:2000;4377.
17. Overberg M.E., Gila B.P., Thaler G.T., Abernathy C.R., Pearton S.J., Theodoropoulou N.A.et al. J. Vac. Sci. Technol. B. 20:2002;969.
18. Fiederling R., Kein M., Rerescher G., Ossan W., Schmidt G., Wang A.et al. Nature. 402:1999;787.
19. Ohno Y., Young D.K., Beschoten B., Matsukura F., Ohno H., Awschalom D.D. Nature. 402:1999;790.
20. Jonker B.T., Park Y.D., Bennett B.R., Cheong H.D., Kioseoglou G., Petrou A. Phys. Rev. B. 62:2000;8180.
21. Park Y.D., Jonker B.T., Bennett B.R., Itskos G., Furis M., Kioseoglou G.et al. App. Phys. Lett. 77:2000;3989.
22. Pearton S.J., Abernathy C.R., Overberg M.E., Thaler G.T., Onstine A.H., Gila B.P.et al. Mater. Today. (June):2002;24.
23. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Kim J., Luo B., Mehandru R.et al. J. Appl. Phys. 91:2002;5203.
24. Kucheyev S.O., Toth M., Phillips M.R., Williams J.S., Jagadish C., Li G. Appl. Phys. Lett. 78:2001;34.
25. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Mil'Vidskii M.G., Redwing J.M., Shin M.et al. Solid-State Electron. 42:1998;627.
26. Polyakov A.Y., Smirnov N.B., Usikov A.S., Govorkov A.V., Pushniy B.S. Solid-State Electron. 42:1998;1959.
27. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Shin M., Skowronski M., Greve D.W. J. Appl. Phys. 84:1998;870.
28. Sze S.M. Physics of semiconductor devices. 1983;Wiley and Sons, NY.
29. Polyakov A.Y., Smirnov N.B., Govorkov A.V., Osinsky A.V., Norris P.E., Pearton S.J.et al. J. Appl. Phys. 90:2001;4032.
30. Reshchnikov M.A., Shahedpour F., Korotkov R.Y., Wessels B.W., Ulmer M.P. J. Appl. Phys. 87:2000;3351.
31. Polyakov A.Y., Usikov A.S., Theys B., Smirnov N.B., Govorkov A.V., Jomard F.et al. Solid-State Electron. 44:2000;1971.