Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

Solid-State Electronics

Volumn 47, Issue 6, 2003, Pages 981-987

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kim, Jihyun ^b   Ren, F ^b   Thaler, G T ^c   Overberg, M E ^c   Frazier, R ^c   Abernathy, C R ^c   Pearton, S J ^c   Lee, C M ^d   Chyi, J I ^d   Wilson, R G ^e   Zavada, J M ^f  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^e US Army Research Office ^*  (United States)

^f U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; GALLIUM NITRIDE; MANGANESE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

CONTACT LAYER STRUCTURES;

LIGHT EMITTING DIODES;

EID: 0037408979     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00472-0     Document Type: Article

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