Room-temperature ferromagnetism in Cr-doped GaN single crystals

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4187-4189

  Park, Sang Eon ^a   Lee, Hyeon Jun ^a   Cho, Yong Chan ^a   Jeong, Se Young ^a   Cho, Chae Ryong ^b,c   Cho, Sunglae ^d  

^a Pusan National University   (South Korea)

^b Advanced Materials Research Laboratory ^*  (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d University of Ulsan   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RADIUS; BULK SINGLE CRYSTALS; COERCIVE FIELD; CORE LEVELS; CR-DOPED GAN; ELECTRICAL RESISTANCE MEASUREMENT; FERROMAGNETIC ORDERINGS; FERROMAGNETIC TRANSITIONS; FLUX METHODS; HYSTERESIS CURVE; ROOM-TEMPERATURE FERROMAGNETISM; SUBSTRATE CRYSTALS; TEMPERATURE DEPENDENCE;

BINDING ENERGY; CHROMIUM; CRYSTAL STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM NITRIDE; MAGNETIC FIELDS; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SINGLE CRYSTALS;

EID: 79955986838     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483115     Document Type: Article

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