Gan and other materials for semiconductor spintronics

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 288-297

  Pearton, S J ^a   Park, Y D ^b   Abernathy, C R ^a   Overberg, M E ^a   Thaler, G T ^a   Kim, Jihyun ^a   Ren, F ^a  

^a University of Florida   (United States)

^b Seoul National University   (South Korea)

Author keywords

Ferromagnetic properties; GaP; Integrated magnetic sensors; Lasers; Semiconductors; Spintronics

Indexed keywords

CHARGE CARRIERS; ELECTRIC CHARGE; FERROMAGNETISM; LASERS; LIGHT EMISSION; MAGNETIZATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS;

SEMICONDUCTOR SPINTRONICS;

GALLIUM NITRIDE;

EID: 0037566753     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0147-6     Document Type: Conference Paper

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