Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire

Solid-State Electronics

Volumn 45, Issue 2, 2001, Pages 255-259

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Usikov, A S ^b   Shmidt, N M ^b   Lundin, W V ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

DEEP CENTERS; ELECTRON BEAM INDUCED CURRENTS; NONRADIATIVE RECOMBINATION DEFECTS; PERSISTENT PHOTOCONDUCTIVITY;

SEMICONDUCTING FILMS;

EID: 0035247660     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00257-4     Document Type: Article

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