Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 677-682

  Liu, Sheng Da ^a   Shin, An ^a   Chen, Shen De ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYDROGENATION; PASSIVATION; PHOTOCONDUCTIVITY;

MOBILITY GAP;

THIN FILM TRANSISTORS;

EID: 0037279366     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1545752     Document Type: Article

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