Gated-four-probe a-Si:H TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 340-342

  Chen, Chun Ying ^a   Kanicki, Jerzy ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HYDROGENATION; INDUCED CURRENTS; INTEGRAL EQUATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

FIELD EFFECT CONDUCTANCE ACTIVATION ENERGY;

THIN FILM TRANSISTORS;

EID: 0031192527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596930     Document Type: Article

References (6)

1. M. J. Powell and J. W. Orton, "Characteristics of amorphous silicon staggered-electrode thin-film transistors." Appl. Phys. Lett., vol. 45, pp. 171-173, 1984.
2. M. Shur, Physics of Semiconductor Devices. Englewood Cliffs, NJ: Prentice-Hall, 1990, pp. 361-363.
3. C.-Y. Chen and J. Kanicki, "High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials," IEEE Electron Device. Lett., vol. 17, pp. 437-439, Sept. 1996.
4. T. Li, C.-Y. Chen, C.-T. Malone, and J. Kanicki, "High-rate deposited amorphous silicon nitride for the hydrogenated amorphous silicon thinfilm transistors," in Proc. Mater. Res. Soc. Symp., 1997, vol. 424, pp. 43-51.
5. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, "Performance of thin hydrogenated amorphous silicon thin-film transistors," J. Appl. Phys., vol. 69, pp. 2339-2345, 1991.
6. C.-Y. Chen and J. Kanicki, "The influence of density of states and series resistance on the field-effect activation energy in a-Si:H TFT," in Proc. Mater. Res. Soc. Symp., 1997, vol. 424, pp. 77-83.