Schottky-contact gated-four-probe a-Si:H TFT structure: A new structure to investigate the electrical instability of a-Si:H TFT

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 382-384

  Chiang, Chun Sung ^a   Chen, Chun Ying ^a,b,c   Kanicki, Jerzy ^a  

^a The Department of Civil and Environmental Engineering   (United States)

^b MOTOROLA INC   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONTACTS; ELECTRON TRAPS; HYDROGEN; SEMICONDUCTOR DEVICE STRUCTURES; STRESS ANALYSIS;

ELECTRICAL INSTABILITY; HOLE CONDUCTION;

THIN FILM TRANSISTORS;

EID: 0032188004     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720193     Document Type: Article

References (8)

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3. C. van Berkel and M. J. Powell, "Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors," Appl. Phys. Lett., vol. 51, pp. 1094-1996, 1987.
4. R. Carluccio, A. Pecora, D. Massimiani, and G. Fortunato, "Determination of the defect redistribution and charge injection contributions to the a-Si:H thin-film transistor instability," Proc. Mat. Res. Soc. Symp., 1994, vol. 336, pp. 829-834.
5. C.-Y. Chen and J. Kanicki, "Gated-four-probe a-Si:H TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT," IEEE Electron Device Lett., vol. 18, pp. 340-342, 1997.
6. C.-Y. Chen and J. Kanicki, "High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD materials," IEEE Electron Device Lett., vol. 17, pp. 437-439, Sept. 1996.
7. K. Pierz, B. Higenberg, H. Mell and G. Weiser, "Gap state distribution in n-type and p-type a-Si:H from optical absorption," J. Non-Cryst. Solids, vol. 97/98, pp. 63, 1987.
8. M. J. Powell, C. van Berkel, and A. R. Franklin, "Defect pool in amorphous-silicon thin-film transistors," Phys. Rev. B, vol. 45, pp. 4161-4170, 1992.