Epitaxy and characterisation of dilute III-As1-yNy on GaAs and InP

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 247-253

  Kohler K ^a   Wagner, J ^a,b   Ganser, P ^a   Serries, D ^a,c   Geppert, T ^a,d   Maier, M ^a   Kirste, L ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c ADAM OPEL AG   (Germany)

^d MAX PLANCK INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

CHEMICAL BOND STRENGTH; POST GROWTH THERMAL ANNEALING;

QUANTUM WELL LASERS;

EID: 10844270581     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040940     Document Type: Article

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