Quaternary GaInAsN with high in content: Dependence of band gap energy on N content

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2448-2450

  Serries, D ^a   Geppert, T ^a   Ganser, P ^a   Maier, M ^a   Kohler K ^a   Herres, N ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTI-CROSSING MODELS; BAND GAP ENERGY; COMPRESSIVE STRAIN; DOUBLE QUANTUM WELL; GAAS; INP SUBSTRATES; INTERACTION PARAMETERS; LOW ENERGIES; N CONTENT; N INCORPORATION; NET EFFECT; PEAK ENERGY; PEAK INTENSITY; PEAK POSITION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

ENERGY GAP; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 79956029488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467612     Document Type: Article

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