Growth of high quality Al0.48In0.52As/Ga0.47In0.53As heterostructures using strain relaxed AlxGayIn1-x-yAs buffer layers on GaAs

Applied Physics Letters

Volumn 69, Issue 3, 1996, Pages 412-414

  Haupt, M ^a   Kohler K ^a   Ganser, P ^a   Emminger, S ^a   Muller S ^a   Rothemund, W ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001023452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118078     Document Type: Article

References (9)

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