Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Journal of Electronic Materials

Volumn 32, Issue 4, 2003, Pages 244-248

  Chen, Guan Ru ^a   Lin, Hao Hsiung ^a   Wang, Jyh Shyang ^a   Shih, Ding Kang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Anneal; Gas source molecular beam epitaxy (GSMBE); InAsN; Interdiffusion; Optical characterization; Photoluminescence; Single quantum well

Indexed keywords

ANNEALING; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037393596     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0216-x     Document Type: Article

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